MJ3001 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJ3001 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
MJ3000
MJ3001
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=20mA
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=50mA
VBE
Base-emitter on voltage
IC=5A ; VCE=3V
MJ3000
VCE=60V; RBE=1.0kΩ
TC=150℃
ICER
Collector cut-off current
MJ3001
VCE=80V; RBE=1.0kΩ
TC=150℃
MJ3000 VCE=30V; IB=0
ICEO
Collector cut-off current
MJ3001 VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
Product Specification
MJ3000/3001
MIN TYP. MAX UNIT
60
V
80
2.0
V
4.0
V
3.0
V
1.0
5.0
mA
1.0
5.0
1.0 mA
1000
2.0 mA
MAX
1.17
UNIT
℃/W
2
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