MC-4R128FKE6D-840 데이터 시트보기 (PDF) - Elpida Memory, Inc

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MC-4R128FKE6D-840

Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 16-BIT)

Elpida Memory, Inc 

MC-4R128FKE6D-840

RIMM Module Current Profile

IDD

RIMM module power conditions Note1

MAX.

Unit

IDD1

One RDRAM in Read Note2, balance in NAP mode

717.6

mA

IDD2

One RDRAM in Read Note2, balance in Standby mode

975

mA

IDD3

One RDRAM in Read Note2, balance in Active mode

1110

mA

IDD4

One RDRAM in Write, balance in NAP mode

777.6

mA

IDD5

One RDRAM in Write, balance in Standby mode

1035

mA

IDD6

One RDRAM in Write, balance in Active mode

1170

mA

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the RI ¶V WR DGG ,2 SRZHU IRU  ¶V IRU D [ QHHG WR DGG  P$ RU 

P$ IRU [ (&& PRGXOH IRU WKH IROORZLQJ  VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

'DWD 6KHHW E0261N10 (Ver. 1.0)

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