LDA110STR 데이터 시트보기 (PDF) - IXYS CORPORATION
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LDA110STR Datasheet PDF : 6 Pages
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INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings
Units
Breakdown Voltage
Input Control Current
30
VP
100
mA
Peak (10ms)
1
A
Power Dissipation
Input Power Dissipation 1
150
mW
Phototransistor 2
150
mW
Isolation Voltage, Input to Output
3750
Vrms
Operational Temperature
-40 to +85
°C
Storage Temperature
-40 to +125
°C
1 Derate linearly 1.33mW / ºC
2 Derate linearly 2mW / ºC
LDA110
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Electrical Characteristics @ 25ºC
Parameter
Output Characteristics
Conditions
Phototransistor Breakdown Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Output Capacitance
IC = 100µA
VCEO = 5V, IF = 0mA
IC = 3mA, IF = 1mA
IF = 1mA, VCE = 2V
25V, f =1MHz
Input Characteristics
Input Control Current
Input Voltage Drop
Common Characteristics
IC = 3mA, VCE = 2V
IF = 5mA
Capacitance, Input to Output
-
Symbol Min
BVCEO
30
ICEO
-
VCE(sat)
-
CTR
300
COUT
-
IF
-
VF
0.9
CI/O
-
Typ Max Units
85
-
V
50
500
nA
-
1
V
8500 30000 %
3
-
pF
0.07
1
mA
1.2
1.4
V
3
-
pF
Switching Characteristics @ 25ºC
Characteristic
Turn-On Time
Turn-Off Time
Symbol
Test Condition
Typ
ton
toff
8
VCC=5V, IF=1mA, RL=500
345
Units
s
Switching Time Test Circuit
VCC
IF
Pulse Width=5ms
Duty Cycle=1%
RL
VCE
IF
VCE
90%
10%
t on
t off
2
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