KTC4375 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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KTC4375

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KTC4375

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Base – Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

*:mounted on ceramic substrate(250mm2×0.8t).

*装于 250mm2×0.8t 的陶瓷上。

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

*PC

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

30

30

5.0

1.5

0.3

500

1.0

150

-55～150

单位

Unit

V

V

V

A

A

mW

W

℃

℃

参数

Parameter

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCEO IC=10mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=1.0mA IC=0

Collector Cut-Off Current

ICBO VCB=30V IE=0

Emitter Base Cut-Off Current

IEBO VEB=5.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=2.0V

VCE(sat) IC=1.5A

IC=500mA

IB=0.03A

Base to Emitter Voltage

VBE VCE=2.0V IC=500mA

Transition Frequency

Collector Output Capacitance

fT VCE=2.0V IC=500mA

Cob

VCB=10V

f=1.0MHz

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

30

V

5.0

V

0.1 μA

0.1 μA

100

320

2.0 V

1.0 V

120

MHz

40 pF

http://www.fsbrec.com

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