IL256AT 데이터 시트보기 (PDF) - Infineon Technologies
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IL256AT Datasheet PDF : 3 Pages
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Figure 9. Normalized HFE versus Ib, Ta
1.2
Normalized to:
IB = 10 µA
1.0
TA = 25°C
VCE = 10 V
0.8
NHFE -20°C
NHFE 25°C
NHFE 50°C
0.6 NHFE 70°C
0.4
1
10
100
IB - Base Current - µA
1000
Figure 10. Normalized saturated HFE versus Ib
1.5
Normalized to:
HFE at VCE = 10V, ICB = 10 µA
TA = 25°C
1.0
TA = -20°C
TA = 25°C
TA = 50°C
0.5
TA = 70°C
VCE(sat) = 0.4 V
0.0
1
10
100
IB - Base Current - µA
1000
Figure 11. Base emitter voltage versus base current
1000
100
TA = 25°C
10
1
.1
.01
.001
0.4
0.5
0.6
0.7
0.8
VBE - Base Emitter Voltage - V
Figure 12. Collector-emitter leakage current versus
temperature
105
104
103
102
101
VCE = 10 V
100
Typical
10-1
10-2
-20
0 20 40 60 80 100
TA - Ambient Temperature - °C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–127
IL256AT
April 3, 2000-18
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