IKB15N60T 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

IKB15N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKB15N60T

q

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel EmCon HE diode

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking Code

IKB15N60T 600V 15A

1.5V

175°C

K15T60

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)

Diode forward current, limited by Tjmax

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time1)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj

Tstg

-

Package Ordering Code

TO-263 Q67040S4712

Value

Unit

600

V

A

30

15

45

45

15

30

45

±20

V

5

µs

130

W

-40...+175

°C

-55...+175

260

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.1 Dec-04

Share Link: