IKB15N60T(2015) 데이터 시트보기 (PDF) - Infineon Technologies

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IKB15N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKB15N60T

TRENCHSTOP™ Series

q

1 .6 m J

*) Eon and Etsinclude losses

due to diode recovery

1 .2 m J

0 .8 m J

0 .4 m J

Ets*

E off

Eon*

0 .0 m J

0A

5A 10A 15A 20A 25A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, rG = 15Ω,

Dynamic test circuit in Figure E)

1.6 mJ *) Eon and Ets include losses

due to diode recovery

1.4 mJ

Ets*

1.2 mJ

1.0 mJ

0.8 mJ

0.6 mJ

E off

0.4 mJ

Eon*

0.2 mJ

        

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 15A,

Dynamic test circuit in Figure E)

0 .9 m J

0 .8 m J

*) Eon and Ets include losses

due to diode recovery

0 .7 m J

Ets*

0 .6 m J

0 .5 m J

0.4mJ Eoff

0 .3 m J

Eon*

0 .2 m J

25°C 50°C

75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 15A, rG = 15Ω,

Dynamic test circuit in Figure E)

1 .2 m J

1 .0 m J

*) Eon and Ets include losses

due to diode recovery

0 .8 m J

Ets*

0 .6 m J

E off

0 .4 m J

0 .2 m J

Eon*

0 .0 m J

300V

350V

400V

450V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 15A, rG = 15Ω,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

7

Rev. 2.8 11.05.2015

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