IKP15N60T(2006) 데이터 시트보기 (PDF) - Infineon Technologies
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IKP15N60T
(Rev.:2006)
(Rev.:2006)
Infineon Technologies
IKP15N60T Datasheet PDF : 13 Pages
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TrenchStop Series
IKP15N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Pb-free lead plating; RoHS compliant
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-1
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IKP15N60T 600V 15A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code Package
K15T60 PG-TO-220-3-1
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
600
30
15
45
45
30
15
45
±20
5
130
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 May 06
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