HM62W16255HTTI 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM62W16255HTTI

4M High Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM62W16255HI Series

Recommended DC Operating Conditions (Ta = –40 to +85°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC*3

VSS * 4

3.0

3.3

0

0

Input voltage

VIH

2.2

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

3.6

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

DC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage

current*1

|ILI|

—

—

2

|ILO|

—

—

2

µA Vin = VSS to VCC

µA Vin = VSS to VCC

Operating power

15 ns cycle ICC

—

supply current

Standby power supply 15 ns cycle ISB

—

current

I SB1

—

—

160

mA

—

50

mA

0.05 5

mA

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Note: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

Min cycle

CS = VIL, Iout = 0 mA

Other inputs = VIH/VIL

Min cycle, CS = VIH,

Other inputs = VIH/VIL

f = 0 MHz

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

IOL = 8 mA

IOH = –4 mA

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

Unit

6

pF

8

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

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