GBL401 데이터 시트보기 (PDF) - Diode Semiconductor Korea

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GBL401

SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

GBL4005 --- GBL410

FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT

4.0

3.0

2.0

1.0

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

100

10

1.0

　 TJ=25

Pulse Width

=300uS

0.1

00

50

100

150

TEMPERATURE,

.01

.4

.6

.8

1

1.2 1.4 1.6

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD

DURGE CURRENT

150

TJ=TJ max.

SINGLE SINE-WAVE

120

(JEDEC METHOD)

90

60

30

1.0 CYCLE

1

10

100

NUMBER OF CYCLES AT 60Hz

FIG.4 -- TYPICAL REVERSE CHARACTERISTIC

500

100

TC=100

10

1.0

0.1

T J= 2 5

.01

0

20

40

60

80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE

FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG

1000

TJ=25

f=1.0 MHz

VSIG=50mVp-p

100

40

50-400V

600-1000V

10

.1

1

4 10

100

REVERSE VOLTAGE, VOLTS

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