BD545 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD545 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD545/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD545
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD545A
BD545B
IC= 30mA ;IB=B 0
BD545C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.625A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
BD545
VCE= 40V; VBE= 0
ICES
Collector
Cutoff Current
BD545A
BD545B
VCE= 60V; VBE= 0
VCE= 80V; VBE= 0
BD545C
VCE= 100V; VBE= 0
ICEO
Collector
Cutoff Current
BD545/A
VCE= 30V; IB=B 0
BD545B/C VCE= 60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 5A; VCE= 4V
hFE-3
DC Current Gain
IC= 10A; VCE= 4V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 6A; IB1= -IB2= 0.6A;
RL= 5Ω; VBE(off)= -4V
MIN TYP. MAX UNIT
40
60
V
80
100
0.8
V
1.0
V
1.8
V
0.4 mA
0.7 mA
1.0 mA
60
25
10
0.6
μs
1.0
μs
isc Website：www.iscsemi.cn
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