FZT489(1995) 데이터 시트보기 (PDF) - Diodes Incorporated.
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FZT489 Datasheet PDF : 1 Pages
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
FZT489
C
COMPLEMENTARY TYPE FZT589
PARTMARKING DETAIL FZT489
E
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
4
A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO 50
VCEO(sus) 30
V(BR)EBO
5
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
V
V
V
100
nA
100
nA
100
nA
0.3
V
0.6
V
1.1
V
IC=100µA
IC=10mA*
IE=100µA
VCB=30V
VCES=30V
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
60
20
IC=1mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=4A, VCE=2V*
fT
150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Cobo
Breakdown Voltage
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT449 datasheet
3 - 188
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