FZT753(1996) 데이터 시트보기 (PDF) - Diodes Incorporated.
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FZT753 Datasheet PDF : 2 Pages
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* Low saturation voltage
* Excellent hFE specified up to 2A
FZT753
C
COMPLEMENTARY TYPE FZT653
PARTMARKING DETAIL FZT753
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-2
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -120
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -100
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-0.1 µA
-10
µA
-0.1 µA
-0.17 -0.3 V
-0.30 -0.5 V
-0.9 -1.25 V
VCB=-100V
VCB=-100V,Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8 -1.0 V
IC=-1A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
70
200
100 200 300
55
170
25
55
IC=-50mA, VCE =-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE =-2V*
IC=-2A, VCE =-2V*
100 140
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
30
pF
Switching Times
ton
40
ns
toff
600
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB =-10V f=1MHz
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
3 - 236
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