MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Symbol
VDSS
VGSS
ID(rms)
IDM
IDA
IS(rms)*1
ISM*1
PD*4
PD*4
Tch
Tstg
Viso
Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
G-S Short
D-S Short
TC’ = 122°C*3
Pulse*2
L = 10µH Pulse*2
Conditions
Pulse*2
TC = 25°C
TC’ = 25°C*3
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
150
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Unit
V
V
Arms
A
A
Arms
A
W
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
Symbol
Item
Conditions
Min.
IDSS
Drain cutoff current
VDS = VDSS, VGS = 0V
—
VGS(th) Gate-source threshold voltage ID = 10mA, VDS = 10V
4.7
IGSS
Gate leakage current
VGS = VGSS, VDS = 0V
—
rDS(ON) Static drain-source
ID = 100A
Tch = 25°C
—
(chip)
On-state resistance
VGS = 15V
Tch = 125°C
—
VDS(ON) Static drain-source
ID = 100A
Tch = 25°C
—
(chip)
On-state voltage
VGS = 15V
Tch = 125°C
—
R(lead)
Lead resistance
ID = 100A
terminal-chip
Tch = 25°C
—
Tch = 125°C
—
Ciss
Input capacitance
—
VDS = 10V
Coss
Output capacitance
VGS = 0V
—
Crss
Reverse transfer capacitance
—
QG
Total gate charge
VDD = 80V, ID = 100A, VGS = 15
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VDD = 80V, ID = 100A, VGS ± 15V
—
td(off)
Turn-off delay time
RG = 13Ω, Inductive load
—
tf
Turn-off fall time
—
trr*1
Reverse recovery time
IS = 100A
—
Qrr*1
Reverse recovery charge
—
VSD*1
Source-drain voltage
IS = 100A, VGS = 0V
—
Rth(ch-c)
Rth(ch-c’)
Thermal resistance
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
—
—
Rth(c-f)
Case to heat sink, Thermal grease Applied*8 (1/6 module) —
Rth(c’-f’)
Contact thermal resistance
Case to heat sink, Thermal grease Applied*3, *8 (1/6 module)
—
Limits
Typ.
—
6
—
4.8
9.1
0.48
0.91
1.2
1.68
—
—
—
820
—
—
—
—
—
6.5
—
—
—
0.1
0.09
Max. Unit
1
mA
7.3
V
1.5
µA
6.6
—
mΩ
0.66
V
—
—
—
mΩ
50
7
nF
4
—
nC
400
250
ns
450
200
200
ns
—
µC
1.3
V
0.30
0.22
K/W
—
—
NTC THERMISTOR PART
Symbol
RTh*6
B*6
Parameter
Resistance
B Constant
Conditions
TTh = 25°C*5
Resistance at TTh = 25°C, 50°C*5
Limits
Min.
Typ.
—
100
—
4000
*1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTh is thermistor temperature.
*6: B = In( R25 )/( 1
1)
R50 T25 T50
R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K]
*7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Unit
Max.
—
kΩ
—
K
Feb. 2009
2