PMST6429 데이터 시트보기 (PDF) - Philips Electronics
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PMST6429 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
PMST6428; PMST6429
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb ≤ 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
PMST6428
DC current gain
PMST6429
VCEsat
collector-emitter saturation
voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
VCE = 5 V
IC = 0.01 mA
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
VCE = 5 V
IC = 0.01 mA
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 1 mA; VCE = 5 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 1 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
−
250
250
250
250
500
500
500
500
−
−
560
−
−
100
MAX.
10
10
10
−
650
−
−
−
1 250
−
−
200
600
660
3
12
700
UNIT
nA
µA
nA
mV
mV
mV
pF
pF
MHz
1999 Apr 22
3
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