2N3838 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2N3838

Devices

New Jersey Semiconductor 

ELECTRICAL CHARACTERISTICS (con't)

Characteristics

ON CHARACTERISTICS

Forward-Current Transfer Ratio

Ic = 150 mAdc, VCE ~ 1 Vdc

Ic = 100 fjAdo, VCE = 10 Vdc

Ic= 1.0 mAdc, VCE =10 Vdc

Ic = 10 mAdc, VCE = 10 Vdc

Ic = 150 mAdc, VCE = 10 Vdc

Ic = 300 mAdc, VCE = 10 Vdc

Collector-Emitter Saturation Voltage

Ic = 150 mAdc, IB= 15 mAdc

Base-Emitter Saturation Voltage

Ic = 150 mAdc, IB = 15 mAdc

DYNAMIC CHARACTERISTICS

Forward Current Transfer Ratio

Ic = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz

Forward Current Transfer Ratio, Magnitude

Ic = 20 mAdc, VCE = 10 Vdc, f = 100 MHz

Small-Signal Common Emitter Input Impedance

Ic = 1.0 mAdc, VCE " 10 Vdc, f - 1.0 kHz

Small-Signal Common Emitter Output Admittance

Ic = 1.0 mAdc, VCE = 10Vdc,f - 1.0kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz < f £ 1.0 MHz

Noise Figure

Ic = 100 (jAdc, VCE = 10 Vdc,f = 1.0 kHz, RO =1.0 kQ

SWITCHING CHARACTERISTICS

Turn-On Time

(See Figure 4 of MIL-PRF- 19500/421)

Turn-Off Time

(See Figure 5 of MIL-PRF-19500/421)

Pulse Response

(See Figured of MIL-PRF-19500/421)

Collector-Emitter Non-Latching Voltage

(See Figure 7 of MIL-PRF-19500/421)

Symbol

hFE

VcEl'sat)

VBE(sat)

ha

ha

hie

h«

cobo

NF

'on

'off

'on + 'off

VCEO

Min. Max. I Unit |

50

35

50

75

35

0.40

Vdc

0.80

1.25

Vdc

60

300

2.0

10

1.5

9.0

kQ

50

(ihmo

8.0

PF

8.0

dB

45

r|s

300

ns

18

T|S

40

Vdc

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