LXE18400X 데이터 시트보기 (PDF) - Philips Electronics
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LXE18400X Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LXE18400X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
Pi
Ptot
Tstg
Tj
Tsld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
CONDITIONS
MIN. MAX. UNIT
open emitter
−
45 V
RBE = 220 Ω
open base
−
30 V
−
25 V
open collector
−
3
V
−
f = 1.85 GHz; VCE = 24 V; class AB −
Tmb = 75 °C
−
−65
−
9
A
12 W
70 W
+150 °C
200 °C
t ≤ 10 s; note 1
−
235 °C
Note
1. Up to 0.2 mm from ceramic.
10
handbook, halfpage
IC
(A)
1
MLC436
I
10 1
1
10
VCE (V)
10 2
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
Fig.2 DC SOAR.
handbook,8h0alfpage
P tot
(W)
60
MLC437
40
20
0
0
50
100
150
200
Tmb (oC)
Fig.3 Power derating curve.
1999 Apr 22
3
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