ECH8662
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=4.5V
ID=3.5A, VGS=4V
ID=1.5A, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=4.5V, ID=6.5A
IS=6.5A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=20V
ID=3.5A
RL=5.7Ω
D
VOUT
ECH8662
P.G
50Ω
S
Ratings
Unit
min
typ
max
40
V
1
μA
±10
μA
0.4
1.3
V
3.9
6.5
S
23
30 mΩ
25
33 mΩ
30
42 mΩ
1130
pF
77
pF
60
pF
14
ns
34
ns
93
ns
55
ns
12
nC
2.2
nC
3.4
nC
0.85
1.2
V
Ordering Information
Device
ECH8662-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1259-2/7