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BAW156

Low-leakage double diode

Philips Electronics 

Philips Semiconductors

Low-leakage double diode

Product specification

BAW156

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

VR = 75 V

VR = 75 V; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

TYP. MAX. UNIT

−

900

mV

−

1000 mV

−

1100 mV

−

1250 mV

0.003 5

nA

3

80

nA

3

−

pF

0.8

3

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on a FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

360

500

UNIT

K/W

K/W

1999 May 11

3

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