DCR1277SD 데이터 시트보기 (PDF) - Dynex Semiconductor

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DCR1277SD

Phase Control Thyristor

Dynex Semiconductor 

DCR1277SD

10000

Conditions:

Tj = 125˚C

QS is total integral stored

charge

IT = 2000A

IT = 1000A

1000

100

0.1

IT

QS

tp

dI/dt

IRM

1.0

10

100

Rate of decay of on-state current dI/dt - (A/µs)

Fig.3 Stored charge

100

VFGM

10

Table gives pulse power PGM in Watts

Pulse width Pulse frequency Hz

µs

100

200

500

1ms

10ms

50 100 400

150 150 150

150 150 125

150 150 100

150 100 25

20 -

-

100W

50W

20W

10W

5W

2W

Tj = 25˚C

Upper limit 99%

Tj = 125˚C

Tj = -40˚C

1

Lower limit 1%

0.1

0.001

0.01

0.1

1

10

Gate trigger current IGT - (A)

IFGM

Fig.4 Gate characteristics

6/9

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