KTC4377 데이터 시트보기 (PDF) - KEXIN Industrial

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KTC4377

Epitaxial Planar NPN Transistor

KEXIN Industrial 

SMD Type

Transistors

Epitaxial Planar NPN Transistor

KTC4377

■ Features

● Collector Power Dissipation: PC=500mW

● Collector Current: IC=2A

SOT-89

4.50±0.1

1.80±0.1

123

0.48±0.1

0.53±0.1

Unit:mm

1.50 ±0.1

0.44±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

30

10

6

2

500

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

DC Current Gain

hFE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition frequency

Collector Output Capacitance

VCE(sat)

VBE

fT

Cob

Test conditons

IC= 1mA, IE=0

IC=10mA, IB=0

IE=1mA, IC=0

VCB=30V, IE=0

VEB=6V, IC=0

VCE=1V, IC=500mA

VCE=1V, IC=2A

IC=2A, IB=50mA

VCE=1V, IC=2A

VCE=1V, IC=500mA

VCB=10V, IE=0, f=1MHz

■ hFE Classification

Marking

Rank

hFE

SA

A

140～240

SB

B

200～330

SC

C

300～450

SD

D

420～600

Unit

V

V

V

A

mW

℃

℃

Min Typ Max Unit

30

V

10

V

6

V

100 nA

100 nA

140

600

70 140

0.5 V

1.5 V

150

MHz

27

pF

1

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