MITSUBISHI IGBT MODULES
CM75TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
150
15
Tj = 25oC
14
13
125 VGE = 20V
100
12
75
11
50
10
25
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 150A
6
IC = 75A
4
2
0
0
103
IC = 30A
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
tf
102
td(on)
101
VCC = 300V
tr
VGE = ±15V
RG = 8.3 Ω
Tj = 125°C
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
VCE = 10V
125
Tj = 25°C
Tj = 125°C
100
75
50
25
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
Tj = 25°C
Tj = 125°C
3
2
1
0
0 30 60 90 120 150
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
101
Cies
100
Coes
101
100
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -150A/µsec
Tj = 25°C
102
101
trr
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
10-1
Cres
VGE = 0V
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 75A
16
VCC = 200V
12
VCC = 300V
8
4
0
0
50
100 1500 200
GATE CHARGE, QG, (nC)
Sep.1998