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3KASMC11AHM3_B/H 데이터 시트보기 (PDF) - Vishay Semiconductors

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3KASMC11AHM3_B/H
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
3KASMC11AHM3_B/H Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
3KASMC10A thru 3KASMC43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SMC (DO-214AB)
PRIMARY CHARACTERISTICS
VWM
VBR
PPPM
PD
IFSM
TJ max.
Polarity
10 V to 43 V
11.1 V to 52.8 V
3000 W
6.0 W
200 A
185 °C
Uni-directional
Package
SMC (DO-214AB)
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
Available
• 3000 W peak pulse power capability with a 10/1000 μs
waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave (2)
Power dissipation on infinite heatsink, TL = 75 °C (fig. 6)
Maximum instantaneous forward voltage at 100 A (2)
PPPM
IPPM
IFSM
PD
VF
3000
See next table
200
6.0
3.5
Operating junction and storage temperature range
TJ, TSTG
-65 to +185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
UNIT
W
A
A
W
V
°C
Revision: 07-Dec-2018
1
Document Number: 88480
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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