BS62UV256 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS62UV256

Ultra Low Power CMOS SRAM 32K X 8 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

2.4

Add Icc1 characteristic parameter

2.5

Change I-grade operation temperature range

- from –25OC to –40OC

2.6

Add speed grade

-10 for 100ns

Revised ICCSB1 sepc.

- from 0.2uA to 0.4uA for C-grade

- from 0.4uA to 0.7uA for I-grade

Revised ICCDR sepc.

- from 0.1uA to 0.4uA for C-grade

- from 0.2uA to 0.7uA for I-grade

BS62UV256

Draft Date

Jan. 13, 2006

May. 25, 2006

Sep. 10, 2006

Remark

R0201-BS62UV256

10

Revision 2.6

Sep.

2006

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