BD651 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

일치하는 목록

BD651

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

Silicon NPN Darlington Power Transistor

BD651

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Breakdown Voltage lc= 30mA; IB= 0

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 3A; IB= 12mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 5A; le= 50mA

VeE(sat) Base-Emitter Saturation Voltage

VeE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

lc= 5A; \= 50mA

lc=3A; VCE=3V

VCB=120V;IE=0

VCB=70V;lE=0;Tc=150-C

ICEO

Collector Cutoff Current

VCE= 60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; lc= 0

hFE

DC Current Gain

lc=3A;VCE=3V

MIN TYP, MAX UNIT

120

V

2.0

V

2.5

V

3.0

V

2.5

V

0.2

mA

2.0

0.5

mA

5

mA

750

Share Link: