BDP948 데이터 시트보기 (PDF) - Infineon Technologies

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BDP948

PNP Silicon AF Power Transistors

Infineon Technologies 

BDP948_BDP950_BDP954

Maximum Ratings

Parameter

Collector-emitter voltage

BDP948

BDP950

BDP954

Symbol

VCEO

Value

45

60

100

Collector-base voltage

BDP948

BDP950

BDP954

VCBO

45

60

120

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Peak base current

Total power dissipation-

TS ≤ 100 °C

Junction temperature

Storage temperature

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

5

3

5

200

500

5

150

-65 ... 150

Thermal Resistance

Parameter

Junction - soldering point1)

Symbol

RthJS

Value

≤ 10

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

A

mA

W

°C

Unit

K/W

2

2011-10-05

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