PNP Silicon AF Power Transistors
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP947, BDP949 (NPN)
BDP948, BDP950
4
3
2
1
VPS05163
Type
BDP948
BDP950
Marking
BDP 948
BDP 950
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP948
BDP950
45
60
45
60
5
5
3
5
200
500
3
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
A
mA
W
°C
K/W
1
Jul-06-2001