RF1S30P06 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RF1S30P06 Datasheet PDF : 8 Pages
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RFG30P06, RFP30P06, RF1S30P06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG30P06, RFP30P06
RF1S30P06SM
-60
-60
±20
30
Refer to Peak Current Curve
Refer to UIS Curve
135
0.9
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t (ON)
t d(ON)
tr
t d(OFF)
tf
t (OFF)
Q g(TOT)
Q g(-10)
Q g(TH)
C ISS
C OSS
C RSS
RθJC
R θ JA
ID = 250µA, VGS = 0V
-60
VGS = VDS, ID = 250µA
-2
VDS = -60V, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, TC = 150oC
-
VGS = ±20V
-
ID = -30A, VGS = -10V (Figure 9)
-
VDD = -30V, ID = 15A, RL = 2.00Ω, VGS = -10V -
RG = 6.25Ω
-
(Figure 13)
-
-
-
V
-
-4
V
-
-1
µA
-
-25 µA
- ±100 nA
- 0.065 Ω
-
80
ns
15
-
ns
23
-
ns
-
28
-
ns
-
18
-
ns
-
-
100 ns
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -48V, ID = 30A,
RL = 1.6Ω,
IG(REF) = 1.6mA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
-
140 170 nC
-
70 85 nC
-
5.5 6.6 nC
- 3200 -
pF
-
800
-
pF
TO-220, TO-263
TO-247
-
175
-
pF
-
-
1.11 oC/W
-
-
62 oC/W
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTES:
V SD
ISD = -30A
t RR
ISD = -30A, dISD/dt = -100A/µs
-
-
-1.5
-
-
150
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
V
ns
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
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