IRF9630 데이터 시트보기 (PDF) - Fairchild Semiconductor
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IRF9630 Datasheet PDF : 7 Pages
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Data Sheet
IRF9630, RF1S9630SM
January 2002
6.5A, 200V, 0.800 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
field effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
Formerly developmental type TA17512.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9630
TO-220AB
IRF9630
RF1S9630SM
TO-263AB
RF1S9630
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.
Features
• 6.5A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF9630, RF1S9630SM Rev. B
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