BB831(2002) 데이터 시트보기 (PDF) - Infineon Technologies

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BB831
(Rev.:2002)

Silicon Variable Capacitance Diodes

Infineon Technologies 

BB831...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

VR = 30 V, TA = 85 °C

IR

nA

-

-

20

-

- 500

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

Capacitance matching1)

VR = 1 V, VR = 28 V, f = 1 MHz

Series resistance

VR = 1 V, f = 100 MHz

CT

CT1/CT28

7.8

0.85

7.8

8.8

1.02

8.6

pF

9.8

1.2

9.5

CT/CT

-

-

3%

rS

-

1

-

1For details please refer to Application Note 047.

2

Nov-07-2002

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