BB503C 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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BB503C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB503C

900MHz Power Gain, Noise Test Circuit

VG1 VG2

C4

C5

VD

C6

Input (50Ω)

R1

R2

C3

G2

G1

L1 L2

R3

RFC

D

L3 L4

S

Output (50Ω)

C1

C2

C1, C2 :

C3 :

C4 to C6 :

R1 :

R2 :

R3 :

Variable Capacitor (10pF MAX)

Disk Capacitor (1000pF)

Air Capacitor (1000pF)

47 kΩ

47 kΩ

4.7 kΩ

L1:

10

21

L3:

29

L2:

26

L4:

18

(φ1mm Copper wire)

Unit: mm

RFC:φ1mm Copper wire with enamel 4turns inside dia 6mm

4

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