BB102M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Ratings
Unit
12
V
+10
V
–0
±10
V
25
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 12
Gate1 to source breakdown V(BR)G1SS +10
voltage
Gate2 to source breakdown V(BR)G2SS ±10
voltage
Gate1 to source cutoff current IG1SS
—
Gate2 to source cutoff current IG2SS
—
Gate1 to source cutoff voltage VG1S(off) 0.1
Gate2 to source cutoff voltage VG2S(off) 0.5
Drain current
I D(op)
10
Forward transfer admittance |yfs|
16
Input capacitance
c iss
1.2
Output capacitance
c oss
0.7
Reverse transfer capacitance crss
—
Power gain
PG
16
Noise figure
NF
—
Typ Max Unit Test Conditions
—
—
V
ID = 200µA, VG1S = VG2S = 0
—
—
V
IG1 = +10µA, VG2S = VDS = 0
—
—
V
IG2 = ±10µA, VG1S = VDS = 0
—
+100 nA VG1S = +9V, VG2S = VDS = 0
—
±100 nA VG2S = ±9V, VG1S = VDS = 0
—
0.8
V
VDS = 9V, VG2S = 6V, ID = 100µA
—
1.1
V
VDS = 9V, VG1S = 9V, ID = 100µA
15
20
mA VDS = 9V, VG1 = 9V, VG2S = 6V
RG = 560kΩ
21
—
mS VDS = 9V, VG1 = 9V, VG2S =6V
RG = 560kΩ, f = 1kHz
1.6
2.2
pF VDS = 9V, VG1 = 9V
1.1
1.5
pF VG2S =6V, RG = 560kΩ
0.011 0.03 pF f = 1MHz
20
—
dB VDS = 9V, VG1 = 9V, VG2S =6V
2.1
3.1
dB RG = 120kΩ, f = 900MHz