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HER151 데이터 시트보기 (PDF) - New Jersey Semiconductor

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HER151
NJSEMI
New Jersey Semiconductor NJSEMI
HER151 Datasheet PDF : 2 Pages
1 2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HER151 -HER158
PRV: 50-1000 Volts
lo : 1.5 Amperes
, One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
HIGH EFFICIENT
RECTIFIER DIODES
DO-41
FEATURES:
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA:
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight: 0.34 gram
0.107(2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00(25.4)
MIN.
0.205 (5.2)
0.166(4.2)
1.00(25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
HER
151
VRRM 50
VRMS 35
VDC
50
IF(AV)
IFSM
VF
|R
|R(H)
Trr
CJ
TJ
TSTG
HER
152
100
70
100
HER
153
200
140
200
1.1
50
HER
154
300
210
300
HER
155
400
280
400
HER
156
600
420
600
15
60
5
50
50
-65to+ 150
-65to + 150
HER
157
800
560
800
1.7
75
HER
158
1000
700
1000
UNIT
V
V
V
A
A
r~ v
uA
uA
ns
pf
°C
of1
Notes :
( 1 ) Reverse Recovery Test Conditions : IF= 0.5 A, IR = 1.0 A, Irr = 0.25A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Quality Semi-Conductors

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