UL631H256 데이터 시트보기 (PDF) - Zentrum Mikroelektronik Dresden AG
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UL631H256 Datasheet PDF : 12 Pages
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UL631H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
= VCCmin
IOH
=-2 mA
IOL
= 2 mA
VCC
= VCCmin
VOH
= 2.4 V
VOL
= 0.4 V
VCC
= 3.6 V
VIH
VIL
VCC
E or G
VOH
VOL
= 3.6 V
= 0V
= 3.6 V
≥ VIH
= 3.6 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-2
-2 mA
2
2
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
2 Address Access Time to Data Validg
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data
Valid
5 E HIGH to Output in High-Zh
6 G HIGH to Output in High-Zh
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Changeg
10 Chip Enable to Power Activee
11 Chip Disable to Power Standbyd, e
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
tELICCH
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both Low.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
35
Min.
35
35
35
15
13
13
5
0
3
0
35
45
Unit
Max.
45
ns
45
ns
45
ns
20
ns
15
ns
15
ns
5
ns
0
ns
3
ns
ns
45
ns
4
April 7, 2005
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