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BT148

Thyristors logic level

Philips Electronics 

Philips Semiconductors

Thyristors

logic level

Product specification

BT148 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

Rth j-mb

Rth j-a

Thermal resistance

junction to mounting base

Thermal resistance

in free air

junction to ambient

MIN. TYP. MAX. UNIT

-

-

2.5 K/W

-

95

- K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

IGT

Gate trigger current

IL

Latching current

IH

Holding current

VT

On-state voltage

VGT

Gate trigger voltage

ID, IR

Off-state leakage current

CONDITIONS

VD = 12 V; IT = 0.1 A

VD = 12 V; IGT = 0.1 A

VD = 12 V; IGT = 0.1 A

IT = 5 A

VD = 12 V; IT = 0.1 A

VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C

VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

MIN.

-

-

-

-

-

0.1

-

TYP.

15

0.17

0.10

1.23

0.4

0.2

0.1

MAX.

200

10

6

1.8

1.5

-

0.5

UNIT

µA

mA

mA

V

V

V

mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

dVD/dt

tgt

tq

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

VDM = 67% VDRM(max); Tj = 125 ˚C;

exponential waveform; RGK = 100 Ω

ITM = 10 A; VD = VDRM(max); IG = 5 mA;

dIG/dt = 0.2 A/µs

VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A;

VR = 10 V; dITM/dt = 10 A/µs;

dVD/dt = 2 V/µs; RGK = 1 kΩ

MIN.

-

-

-

TYP.

50

2

100

MAX. UNIT

- V/µs

-

µs

-

µs

October 1997

2

Rev 1.300

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