KSA1175 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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KSA1175

TO-92S Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T

TO-92S Plastic-Encapsulate Transistors

KSA1175 TRANSISTOR (PNP)

TO-92S

FEATURES

z Collector-Base Voltage

z Complement to KSC2785

1. EMITTER

2. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

Unit

-60

V

-50

V

-5

V

-0.15

A

0.25

W

150

℃

-55-150

℃

3. BASE

12 3

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol

Test conditions

V(BR)CBO IC=-0.1mA, IE=0

V(BR)CEO IC=-10mA, IB=0

V(BR)EBO IE=-10μA, IC=0

ICBO

VCB=-60V, IE=0

IEBO

VEB=-5V, IC=0

hFE

VCE=-6V, IC=-1mA

VCE(sat) IC=-100mA, IBB=-10mA

VBE

VCE=-6V, IC=-1mA

fT

VCE=-6V, IC=-10mA

Cob

VCB=-10V, IE=0,f=1MHz

VCE=-6V, IC=-0.3mA,

NF

f=100HZ, Rg=10KΩ

Min Typ Max

-60

-50

-5

-0.1

-0.1

40

700

-0.3

-0.5

-0.8

50

2.8

20

Unit

V

V

V

μA

μA

V

V

MHz

pF

dB

CLASSIFICATION OF hFE

Rank

R

Range

40-80

O

70-140

Y

120-240

G

200-400

L

350-700

www.cj-elec.com

1

D,Aug,2016

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