KSA1175OTA 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSA1175OTA

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-50

-45

IB = -400µA

-40

IB = -350µA

-35

IB = -300µA

-30

IB = -250µA

-25

IB = -200µA

-20

IB = -150µA

-15

IB = -100µA

-10

IB = -50µA

-5

0

0

-2

-4

-6

-8 -10 -12 -14 -16 -18 -20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

IC=10IB

-1

VBE(sat)

-0.1

VCE(sat)

-0.01

-0.1

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

f=1MHz

IE=0

10

1000

VCE = -6V

100

10

1

-0.1

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 2. DC current Gain

-100

VCE=-6V

-10

-1

-0.1

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE(sat)[V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

1000

V =-6V

CE

100

1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

©2002 Fairchild Semiconductor Corporation

10

-1

-10

IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

Rev. A2, September 2002

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