CM50TU-24H(1998) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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CM50TU-24H Datasheet PDF : 4 Pages
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MITSUBISHI IGBT MODULES
CM50TU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM50TU-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C)
Mounting Torque, M4 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
1200
±20
50
100*
50
100*
400
1.3 ~ 1.7
Mounting Torque, M5 Mounting
–
2.5 ~ 3.5
Weight
–
570
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
IC = 5mA, VCE = 10V
4.5
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C
–
IC = 50A, VGE = 15V, Tj = 125°C
–
Total Gate Charge
Emitter-Collector Voltage*
QG
VCC = 600V, IC = 50A, VGE = 15V
–
VEC
IE = 50A, VGE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
–
–
6
2.9
2.85
187
–
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Cies
–
Output Capacitance
Coes
VCE = 10V, VGE = 0V
–
Reverse Transfer Capacitance
Cres
–
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 50A,
–
Load
Switch
Rise Time
Turn-off Delay Time
tr
td(off)
VGE1 = VGE2 = 15V,
–
RG = 6.3Ω, Resistive
–
Times
Fall Time
Diode Reverse Recovery Time
tf
Load Switching Operation
–
trr
IE = 50A, diE/dt = -100A/µs
–
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = -100A/µs
–
Typ.
–
–
–
–
–
–
–
–
0.28
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.7
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
7.5
2.6
1.5
80
200
150
350
300
–
Units
nF
nF
nF
ns
ns
ns
ns
µC
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Per IGBT 1/6 Module
–
Rth(j-c)D
Per Free-Wheel Diode 1/6 Module
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.018
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
Sep.1998
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