MMBT5401 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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MMBT5401

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Complementary to MMBT5551

Ideal for medium power amplification and switching

MMBT5401 (PNP)

MARKING: 2L

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

-160

VCEO

-150

VEBO

-5

IC

-0.6

PC

0.3

TJ

150

Tstg

-55 to +150

Unit

V

V

V

A

W

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Test conditions Min

Collector-base breakdown voltage

VCBO IC= -100μA, IE=0

-160

Collector-emitter breakdown voltage

VCEO IC= -1mA, IB=0

-150

Emitter-base breakdown voltage

VEBO IE= -10μA, IC=0

-5

Collector cut-off current

Emitter cut-off current

ICB VCB=-120 V , IE=0

O

IEB VEB=-4V , IC=0

O

hFE1 VCE= -5V, IC= -1mA

80

DC current gain

hFE2 VCE= -5V, IC=-10mA 100

hFE3 VCE= -5V, IC=-50mA 50

Collector-emitter saturation voltage

VCE(sat) IC=-50 mA, IB= -5mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC= -50 mA, IB=

fT

V-5CmEA= -5V, IC=

100

-10mA

f=30MHz

Max Unit

V

V

V

-0.1

μA

-0.1

μA

300

-0.5

V

-1

V

MHz

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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