IRL630S 데이터 시트보기 (PDF) - International Rectifier

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IRL630S

HEXFET® Power MOSFET

International Rectifier 

IRL630S

D.U.T

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

RG

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

*

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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