AM1011-500 데이터 시트보기 (PDF) - STMicroelectronics

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AM1011-500

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

STMicroelectronics 

AM1011-500

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

. POUT = 500 W MIN. WITH 8.5 dB MIN.

GAIN

. 10:1 LOAD VSWR CAPABILITY @ 10µS.,

1% DUTY

. SIXPAC™ HERMETIC METAL/CERAMIC

PACKAGE

. EMITTER SITE BALLASTED OVERLAY

GEOMETRY

. REFRACTORY/GOLD METALLIZATION

. LOW THERMAL RESISTANCE

. INTERNAL INPUT/OUTPUT MATCHING

. CHARACTERIZED UNDER 32µS.,2%

DUTY CYCLE PULSE CONDITIONS

.400 x .600 2LFL (M198)

hermetically sealed

ORDER CODE

AM1011-500

BRANDING

1011-500

DE S CRI P T IO N

The AM1011-500 device is a high power Class C

transistor specifically designed for L-Band Av-

ionic applications involving high pulse burst duty

cycles.

This device is capable of operation over a wide

range of pulse widths, duty cycles, and tempera-

tures. Low RF thermal resistance and computer-

ized automatic wire bonding techniques ensure

high reliability and product consistency.

The AM1011-500 is supplied in the SIXPAC™

Hermetic metal/ceramic package with internal in-

put/output matching structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

PDISS

IC

VCC

TJ

Power Dissipation*

Device Current*

(TC ≤ 100°C)

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

T ST G

Storage Temperature

Value

Unit

1,3 60

W

27

A

55

V

250

°C

− 65 to +200

°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

0.11

°C/W

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