2N4393CSM(1994) 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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2N4393CSM
(Rev.:1994)
(Rev.:1994)
Semelab - > TT Electronics plc
2N4393CSM Datasheet PDF : 2 Pages
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SEME
LAB
2N4393CSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V(BR)GSS
VGSS(off)
IDSS*
Gate – Source Breakdown Voltage
Gate – Source Cut–off Voltage
Saturation Current
IGSS
Gate Reverse Current
ID(off)
Drain Cut–off Current
VDS(on)
RDS(on)
Drain – Source On Voltage
Drain – Source On Resistance
DYNAMIC CHARACTERISTICS
VDS = 0V
VDS = 15V
VDS = 20V
VGS = –5V
VDS = 0V
VDG = 10V
VDS = 10V
VGS = 0V
VGS = 0V
IG = –1µA
ID = 10nA
VGS = 0V
Tamb = 125°C
VGS = –10V
VGS = –10V
Tamb = 125°C
ID = 3mA
ID = 1mA
–35
–0.5
5
RDS(on) Drain – Source On Resistance
VGS = 0V
f = 1kHz
ID = 0mA
CISS
Common – Source Input Capacitance VDS = 20V
f = 1MHz
VGS = 0V
CRSS
Common – Source Reverse Transfer VDS = 0V
Capacitance
f = 1MHz
VGS = –5V
_
en
Equivalent Input Noise Voltage
VDG = 10V
f = 1kHz
ID = 10mA
Typ.
–55
–5
–3
5
3
0.25
13
4
3.0
Max. Unit
V
–3
mA
–100 pA
–200 nA
100 pA
200 nA
0.4
V
100
Ω
100
Ω
16
pF
5
pF
nV
√Hz
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Prelim. 5/94
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