2SC2707 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
일치하는 목록
2SC2707 Datasheet PDF : 2 Pages
| |||
, Ona.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2707
DESCRIPTION
• Collector-Emitter Breakdown Voltage^-,
= 180V(Min
• High Power Dissipation
• Complement to Type 2SA1147
APPLICATIONS
• Designed for power switching amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25"C
T,
Junction Temperature
Tstg
Storage Temperature
5
A
150
W
150
•c
-65-150
t:
'"'"'v-^BH^X^
",
[X^
T»L
'
2
PIN 1. BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
r
i• 1
|
r-
I
I
~*IU~D ?PL LK
V-
•/!~rT\ ,/' ^ 4
^>-s? j^ ^-y-^ G t |B
'-re=i
[HM
A
B
C
D
E
(J_
H
K
L
~N~
i
nun
MIH MAX
3900
25 30 26.S7
7.80 6.5C
0.30 1 ,10
MO 160
1092
S4&
::.a 1350
1675 170S
19.«" 1962
400 433
V
4 30 4 50
N.I Scnii-Conduttors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he bold accurate and reliable ;tt the lime of uoing
(o press. I lm\e\er. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Scmi-Conduclors encuura.ues customers to verily that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 