F1220 데이터 시트보기 (PDF) - Polyfet RF Devices

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F1220

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices 

polyfet rf devices

F1220

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet" TMprocess features

gold metal for greatly extended

lifetime. Low output capacitance

and high Ft enhance broadband

performance

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

20 Watts Single Ended

Package Style AA

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

Storage

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

90 Watts

1.95 oC/W

200 oC

-65 oC to 150oC

4A

50 V

50 V

30V

RF CHARACTERISTICS ( 20WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Gps

Common Source Power Gai

10

dB Idq = 0.8 A, Vds = 12.5 V, F = 175 MHz

η

Drain Efficiency

60

% Idq = 0.8 A, Vds = 12.5 V, F = 175 MHz

VSWR Load Mismatch Toleranc

20:1 Relative Idq = 0.8 A, Vds = 12.5 V, F = 175 MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltag

40

V

Ids = 0.1 A, Vgs = 0V

Idss

Zero Bias Drain Curren

2

mA

Vds = 12.5 V, Vgs = 0V

Igss

Gate Leakage Curren

1

uA

Vds = 0 V, Vgs = 30V

Vgs

Gate Bias for Drain Curren

1

7

V

Ids = 0.2 A, Vgs = Vds

gM

Forward Transconductanc

1.6

Mho

Vds = 10V, Vgs = 5V

Rdson Saturation Resistanc

0.45

Ohm

Vgs = 20V, Ids = 16 A

Idsat

Saturation Curren

15

Amp

Vgs = 20V, Vds = 10V

Ciss

Common Source Input Capacitanc

80

pF

Vds = 12.5 V, Vgs = 0V, F = 1 MHz

Crss

Common Source Feedback Capacitanc

12

pF

Vds = 12.5 V, Vgs = 0V, F = 1 MHz

Coss

Common Source Output Capacitanc

60

pF

Vds = 12.5 V, Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 8/1/97

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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