2SC4097 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SC4097 Datasheet PDF : 3 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC4097
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown
voltage
V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=1mA,IB=0
32
V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
1 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
1 μA
DC current gain
Collector-emitter saturation
voltage
hFE
VCE=3V,IC=100mA
VCE(sat)
ICE=500mA,IB=50mA
82
390
0.4 V
Base-emitter saturation voltage VBE(sat) ICE=500mA,IB=50mA
1.1 V
Transition frequency
fT
VCE=5V, IC= 20mA,f=100MHz
Collector output capacitance
Cob
VCB=12V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
P
Q
Range
82-180
120-270
Marking
CP
CQ
250
MHz
6 pF
R
180-390
CR
F003
Rev.A
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