2SC2873 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SC2873 Datasheet PDF : 4 Pages
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Production specification
Silicon NPN Epitaxial Transistor
2SC2873
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0
50
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
VCE=2V,IC=500mA
70
240
hFE
VCE=2V,IC=2A
20
Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=50mA
1.2 V
Transition frequency
fT
VCE=2V,Ic=0.5A
120
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
30
pF
CLASSIFICATION OF hFE
Rank
Range
MARKING
O
70-140
MO
Y
120-240
MY
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E050
Rev.A
www.gmicroelec.com
2
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