2SB1073 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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2SB1073

PNP Epitaxial Planar Silicon Transistors

Galaxy Semi-Conductor 

PNP Epitaxial Planar Silicon Transistors

FEATURES

 Low collector-emitter saturation

voltage VCE(sat).

Pb

Lead-free

 Large peak collector current ICP.

 Mini Power type package,allowing downsizing

of the equipment and automatic insertion through

the tape packing and the magazine packing.

Production specification

2SB1073

ORDERING INFORMATION

Type No.

Marking

2SB1073

IQ/IR

SOT-89

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current

-4

A

ICP

Peak collector current

-7

A

PC

Collector Dissipation

1

W

Tj,Tstg

Junction and Storage Temperature

-55 to +150

℃

E076

Rev.A

www.gmesemi.com

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