2SC1766 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SC1766

TRANSISTOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC1766

TRANSISTOR(NPN)

SOT-89-3L

FEATURES

z Small Flat Package

z High Speed Switching Time

z Low Collector-emitter saturation voltage

APPLICATIONS

z Power Amplifier

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1. BASE

2. COLLECTOR

3. EMITTER

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

50

50

5

2

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)*

VCE(sat)

VBE(sat)

fT

Test conditions

IC=100µA,IE=0

IC=1mA,IB=0

IE=100µA,IC=0

VCB=50V,IE=0

VEB=5V,IC=0

VCE=2V, IC=0.5A

VCE=2V, IC=2A

IC=1A,IB=50mA

IC=1A,IB=50mA

VCE=2V,IC=0.5A,f=100MHz

Min Typ

50

50

5

70

20

120

Max

0.1

0.1

240

0.5

1.2

Unit

V

V

V

µA

µA

V

V

MHz

CLASSIFICATION OF hFE(1)

RANK

P

RANGE

82–180

MARKING

P1766

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Q

120–270

Q1766

Y

180–390

Y1766

１　

JinYu

semiconductor

www.htsemi.com

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