2SA807 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SA807

Silicon PNP Power Transistor

New Jersey Semiconductor 

JEIIEU ^E-mi-L-onaactoi i-Pioaueki, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA807

DESCRIPTION

• High Power Dissipation-

: Pc= 50W(Max.)@Tc=25°C

• Collector-Emitter Breakdown Voltage-

= -60V(Min.)

APPLICATIONS

• Designed for general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-60

V

VEBO Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-6

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25'C

Tj

Junction Temperature

Tstg

Storage Temperature

-3

A

50

W

150

'C

-65-150 •c

PIN 1.BASE

2. HwllTTER

3. COLLECT OR (CASE)

TO-3 package

1

1

r

DIM

A

B

c.

D

E

_Ji_

H

K

t

N

0

u

V

win

MM MAX

33.00

25,30 2S&7

7,30 E.50

0.90 1.10

1.40 1.60

1092

54$

ll.iO 1350

16.75

19.40

400

30,00

430

1705

1962

420

3020

450

NJ Somi-CoiKluctors reserves the right to change test conditions, parameter limits and package dimensions without

nonce. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. Ilouever. N.I Semi-Conductorsassumes no responsibility tor any errors or omissions discovered in its use. "

NJ Semi-Conductors encouragescustomers to verify that datasheets are current before plucina orders.

Quality Semi-Conductors

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