2SA1160 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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2SA1160

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SA1160

2SA1160 TRANSISTOR (PNP)

D FEATURE

T Power dissipation

.,L PCM : 0.9 W (Tamb=25℃)

Collector current

ICM: -2A

O Collector-base voltage

V(BR)CBO: -20 V

C Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

O Collector-base breakdown voltage

R Collector-emitter breakdown voltage

T Emitter-base breakdown voltage

C Collector cut-off current

Emitter cut-off current

LE DC current gain

E Collector-emitter saturation voltage

J Transition frequency

WEOutput capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

fT

Cob

Test conditions

Ic= -1mA , IE=0

IC=-10mA , IB=0

IE= -1mA, IC=0

VCB= -20 V, IE=0

VEB= -6 V, IC=0

VCE=-1V, IC= -0.5A

VCE=-1V, IC= -4A

IC= -2A, IB=-50mA

VCE=-1V, IC= -0.5A

VCE=-10V, IE=0,f=1 MHz

MIN

-20

-10

-6

140

60

TYP

-0.2

140

50

MAX

-0.1

-0.1

600

UNIT

V

V

V

µA

µA

-0.5

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

A

140-280

B

200-400

C

300-600

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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